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Electronic plating
Lanthanum hexaboride (LaB₆) has important applications in the field of electronic film deposition (especially thermal evaporation deposition and electron beam evaporation deposition) due to its unique electron emission properties and chemical stability. With its efficient and stable electron emission capability, LaB₆ is a core material in high-precision film deposition processes, especially in the semiconductor and optical fields where it is irreplaceable. Future development directions include nanometer cathode design and composite doping technology to further reduce energy consumption and expand the application range. 1. Excellent thermionic emission performance Low work function (2.4-2.8eV), can efficiently emit electrons at high temperatures, and is an ideal electron beam evaporation source material. High current density (up to 100A/cm²), significantly improves film deposition efficiency, suitable for large-area or high-melting-point material film deposition needs (such as metal, oxide films). 2. High-temperature stability High melting point (2715°C), not easily volatile or decomposed during long-term operation in a vacuum environment, and has a longer lifespan than traditional tungsten filament evaporation sources. Resistant to chemical corrosion, especially suitable for the deposition of active materials (such as aluminum, titanium, etc.), avoiding contamination of the film layer. 3. Electron beam focusing capability The electron beam emitted by the LaB₆ cathode has concentrated energy and a small spot size, allowing precise control of the film deposition area, suitable for fine film deposition of micro-nano devices (such as semiconductors, optical coatings). 4. Application scenarios Electron beam evaporation deposition (E-beam Evaporation) LaB₆ is used as a cathode electron source for depositing high-melting-point materials (such as SiO₂, Al₂O₃, ITO, etc.), widely used in: Semiconductor industry: Metal interconnect layers (Al, Cu) of integrated circuits. Optical film deposition: Anti-reflection films, multilayer dielectric coatings of mirrors. Display technology: Transparent conductive films (ITO) of OLED electrodes. Field emission display (FED) Utilizing the low threshold field emission characteristics of LaB₆ to develop high-brightness, low-power display devices. Scanning electron microscope (SEM) electron source Replacing traditional tungsten filaments to provide higher resolution and stability. 5. Technological challenges and improvements Higher cost: The preparation of LaB₆ single crystals is complex, and the cost can be reduced by doping (such as CeB₆) or optimizing the sintering process. High brittleness: It is necessary to enhance the mechanical strength through nanostructure design or composite support structures (such as molybdenum base). Surface oxidation: In a vacuum environment, it is necessary to avoid exposure to oxygen, and preheating degassing is usually used to maintain performance. 6. Comparison with other electron source materials Characteristics LaB₆ Tungsten (W) Cerium hexaboride (CeB₆) Work function (eV) 2.4 - 2.8 4.5 2.6 - 2.8 Operating temperature (°C) 1500 - 1800 2200 - 2500 1400 - 1600 Lifespan (hours) 500 - 1000 50 - 100 800 - 1200 Applicable scenarios High-precision coating Low-cost conventional coating Long lifespan requirements Lanthanum hexaboride (LaB₆), with its outstanding advantages of low work function, high melting point, good chemical stability, high emission current density, high brightness, and long lifespan, has become the most mainstream and ideal thermionic cathode material in modern electron beam evaporation deposition equipment. It makes it possible to efficiently and stably evaporate various high-melting-point and refractory materials, and is one of the key components for obtaining high-performance, high-purity films. Its excellent performance significantly improves the production efficiency and film quality of electron beam deposition processes.
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