Silicon Carbide (SiC) Ceramic Silicon Carbide (SiC) is a high-performance ceramic material with the following outstanding characteristics: 1. Extremely High Hardness and Wear Resistance Mohs hardness 9.2-9.5, second only to diamond and cubic boron nitride (CBN), suitable for extreme wear environments (such as bearings, seals, cutting tools). Wear resistance is superior to alumina (Al₂O₃) and tungsten carbide (WC), with a long service life. 2. Excellent High-Temperature Performance Withstands temperatures up to 1600°C (in air) or even higher (up to 2000°C in an inert environment), superior to most metals and ceramics. Maintains high strength at high temperatures, suitable for hot-end components of aero-engines and gas turbines. 3. Excellent Chemical Stability Resistant to acid and alkali corrosion (except hydrofluoric acid and molten strong alkalis), can be used in chemical reactors, pumps, valves and other corrosive environments. Strong oxidation resistance, a SiO₂ protective layer is formed on the surface at high temperatures, preventing further oxidation. 4. High Thermal Conductivity and Low Thermal Expansion Thermal conductivity (120-200 W/m•K) is close to that of aluminum metal, but the coefficient of thermal expansion (4.5×10⁻⁶/K) is much lower than that of metal, with excellent thermal shock resistance, suitable for rapid cooling and heating environments (such as semiconductor wafer chucks). 5. Good Electrical Properties Can be used as a semiconductor material (band gap 3.2 eV, used in high-temperature/high-frequency electronic devices). High breakdown electric field strength, suitable for high-voltage power equipment (such as SiC MOSFETs, diodes).

Sheathed Straight Hole Nozzle Straight hole nozzles are characterized by their simple structure, consisting only of a converging section and a straight section. These nozzles suffer from issues such as inlet region vortices, high pressure losses, and low exit velocity; the exit jet velocity is as low as 50% of that of a Venturi nozzle. Straight hole nozzles are typically used in sandblasting machines with low jet intensity and narrow enclosed structures. BR-SB series straight hole nozzles offer threaded and flanged connections for less demanding open sandblasting processes. Nozzle Material: Boron Carbide/Tungsten Carbide/Silicon Carbide Sheath: Aluminum/Steel/Polyethylene 2" Coarse Thread, Inlet Size: 32mm 1-1/4" Fine Thread, Inlet Size: 25mm Long Straight Hole Nozzle Made of Boron Carbide (B4C) or Tungsten Carbide (TC). Silicon Carbide (SiC)ModelOrificeLengthConnection Thread SpecificationBR-SBB-33/16"(4.8mm)130 mm1-1/4"NPSM; G1-1/4"; 2" UNCBR-SBB-41/4″ (6.4mm)130 mm1-1/4"NPSM; G1-1/4"; 2" UNCBR-SBB-55/16″(7.9mm)150 mm1-1/4"NPSM; G1-1/4"; 2" UNCBR-SBB-63/8″ (9.5mm)170 mm1-1/4"NPSM; G1-1/4"; 2" UNCBR-SBB-77/16″(11.1mm)200 mm1-1/4"NPSM; G1-1/4"; 2" UNCBR-SBB-81/2″ (12.7mm)220 mm1-1/4"NPSM; G1-1/4"; 2" UNCStraight Hole Nozzle  The material can be boron carbide/tungsten carbide/silicon carbide.Dimensions (length/outer diameter/inner diameter) and protective sheath can be customized.Inner Hole SizeODOuter DiameterNote2mm-12.7mm20mm10-25mmSpecial sizes can be customized according to customer requirementsFrom 1/4″ (6.4mm)-1/2″ (12.7mm)CustomizedCustomizedFrom 1/4″ (6.4mm)-1/2″ (12.7mm)Customized and FlangedCustomized  

Boron carbide (B₄C), due to its unique physical and chemical properties, has significant advantages in the field of armor protection. The following are its main advantages:  Physical and Chemical Properties of Boron Carbide Ceramics from Guizhou Muyee Fine Ceramics Serial Number Item Performance Parameters 1 Boron Carbide Content B4C (%) 98.47 2 Total Boron TOTAL B (%) 77.92 3 Total Carbon TOTAL C (%) 20.92 4 Iron Oxide Fe 2 O 3 (%) 0.035 5 Boron Oxide B 2 O 3 0.14 6 Bulk Density g/cm³ 3 2.50-2.52 7 Flexural Strength Mpa 680 8 Compressive Strength Mpa 2980 9 Fracture Toughness K IC Mpa.m 1/2 3.8 10 Young's Modulus Gpa 450 11 Microhardness HV Mpa 3650 12 Sound Velocity m/sec 14300 Boron carbide (B₄C), due to its unique physical and chemical properties, has significant advantages in the field of armor protection. The following are its main advantages:  1. Extremely High Hardness  Mohs hardness reaches 9.6, second only to diamond and cubic boron nitride, effectively resisting penetration from high-speed impact objects such as bullets and shrapnel.  High compressive strength (approximately 2.9 GPa), suitable as the front layer of composite armor to directly absorb impact energy. 2. Lightweight  Low density (2.52 g/cm³), only 1/3 that of steel and 85% that of silicon carbide (SiC). Under the same level of protection, it can significantly reduce the weight of the armor, suitable for vehicles, aircraft, and individual protective equipment (such as bulletproof inserts). 3. Excellent Anti-ballistic Performance  High elastic modulus (450-470 GPa) and fracture toughness, which can consume projectile kinetic energy through fragmentation and blunting.  The protection efficiency against small-caliber armor-piercing projectiles (such as 7.62 mm AP) and fragments is significantly better than that of traditional metal armor. 4. High Temperature Resistance and Chemical Stability  High melting point (2450 °C), maintaining structural strength even in high-temperature environments.  Resistant to acid and alkali corrosion, suitable for harsh environments (such as naval equipment or chemical protection). 5. Neutron Absorption Capacity  Boron has a high thermal neutron absorption cross-section (600 barn), and can be used for nuclear radiation shielding or nuclear facility protection, combining structural and functional properties. 6. Multifunctional Composite Design  Often combined with carbon fiber, Kevlar fiber, ultra-high molecular weight polyethylene fiber, ceramic laminated materials, or metal backing plates (such as titanium alloy) to form a gradient protection structure, improving resistance to multiple impacts. 7. Limitations and Countermeasures:  High brittleness: prone to cracking under impact, requiring improvement through nano-modification, addition of toughening phases (such as SiC particles), or optimization of sintering processes.  High cost: powder preparation and sintering processes are complex, mostly used in key parts (such as the front of armored vehicles or pilot protection).

Boron carbide (B₄C) possesses significant advantages in armor protection due to its unique physical and chemical properties. Its main advantages are: 1. Extremely High Hardness - Mohs hardness of 9.6, second only to diamond and cubic boron nitride, effectively resisting penetration from high-speed projectiles such as bullets and shrapnel. - High compressive strength (approximately 2.9 GPa), suitable as the front layer of composite armor to directly absorb impact energy. 2. Lightweight - Low density (2.52 g/cm³), only 1/3 that of steel and 85% that of silicon carbide (SiC). For the same level of protection, it significantly reduces armor weight, suitable for vehicles, aircraft, and individual protective equipment (such as ballistic plates). 3. Excellent Ballistic Performance - High elastic modulus (450-470 GPa) and fracture toughness, dissipating projectile kinetic energy through fragmentation and blunting. - Significantly superior protection efficiency against small-caliber armor-piercing projectiles (such as 7.62 mm AP) and shrapnel compared to traditional metal armor. 4. High Temperature Resistance and Chemical Stability - High melting point (2450 °C), maintaining structural strength at high temperatures. - Resistant to acid and alkali corrosion, suitable for harsh environments (such as naval equipment or chemical protection). 5. Neutron Absorption Capacity - Boron has a high thermal neutron absorption cross-section (600 barn), usable for nuclear radiation shielding or nuclear facility protection, combining structural and functional properties. 6. Multifunctional Composite Design - Often combined with carbon fiber, Kevlar fiber, ultra-high molecular weight polyethylene fiber, ceramic laminated materials, or metal backing plates (such as titanium alloy) to form a gradient protection structure, improving resistance to multiple impacts. 7. Limitations and Countermeasures: - High Brittleness: Susceptible to cracking under impact, requiring improvement through nanomodification, addition of toughening phases (such as SiC particles), or optimization of sintering processes. - High Cost: Powder preparation and sintering processes are complex, mostly used in critical areas (such as the front of armored vehicles or pilot protection). Typical Applications: - Military: Composite armor for armored vehicles, ballistic plates for helicopters, body armor (such as enhanced versions of the US military's "Interceptor" armor). - Civilian: Riot control vehicles, armored transport for valuables, nuclear power plant protection components. Boron carbide is irreplaceable in scenarios requiring both lightweight and high protection. Future material composite and process optimization will further expand its application boundaries.

Compared to straight-hole nozzles, single venturi nozzle have better aerodynamic performance, stronger vortex improvement, and lower pressure loss. This type of nozzle can improve the momentum of the abrasive, increase the impact energy, and improve the cleaning effect. This series is widely used in sandblasting processes where long sandblasting distances, large cleaning areas, and high impact forces are required. Type: Venturi Nozzle  Application: Mobile Sandblaster Thread Specification: 1-1/4''NPSM, G1-14'', 2'' 4-1/2 UNC  ID: 1/4"-1/2" (6.4 mm - 12.7 mm)  OD: 1-5/8" (42 mm)  Length: 130 mm - 210 mm Product Dimensions BR-VSA/B Series Single-Inlet Nozzle Series Inner Diameter Outer Diameter Length BR-VSA/B-4 1/4″(6.4mm) 1 - 5/8″(36mm) 130mm BR-VSA/B-5 5/16″(7.9mm) 1 - 5/8″(36mm) 150mm BR-VSA/B-6 3/8″(9.5mm) 1 - 5/8″(36mm) 170mm BR-VSA/B-7 7/16″(11.1mm) 1 - 5/8″(36mm) 200mm BR-VSA/B-8 1/2″(12.7mm) 1 - 5/8″(36mm) 210mm   Comparison of Single-Inlet and Double-Inlet Nozzles Characteristics Single-Inlet Venturi Nozzle Double-Inlet Nozzle Inlet 1 (Main Air Inlet) 2 (Main Air Inlet + Secondary/Auxiliary Air Inlet) Acceleration Mechanism Acceleration solely relies on the Venturi effect of the main airflow. Main airflow + secondary airflow secondary impact acceleration in the throat/diffusion section Sandblasting Media Velocity Relatively high Relatively low Efficiency General Very high Induction Capacity General, easily affected by abrasive type/sand pipe length Strong and stable, not easy to clog Air Consumption Same Same Cost Lower Higher Usage Scenarios Severely rusted surfaces requiring deep processing Generally rusted surfaces requiring large-area sandblasting

The "dual air intake" design of the sandblasting nozzle introduces a second (auxiliary) compressed air stream to impact and accelerate the abrasive in the critical throat or diffusion section, significantly improving the final ejection speed, efficiency, abrasive entrainment capacity, and stability of the abrasive. It is a powerful tool for pursuing ultimate productivity and handling high-difficulty tasks. However, this performance improvement comes at the cost of higher compressed air consumption, equipment cost, and system complexity. Users need to weigh these factors based on their specific job requirements (efficiency requirements, substrate hardness, abrasive type, budget, air compressor capacity). For professional sandblasting operations requiring maximum efficiency and handling challenging conditions, dual air intake nozzles are usually a worthwhile investment.

Physicochemical Properties of Boron Carbide Ceramics from Guizhou Muyee Fine Ceramics

Aluminum nitride (AlN) is a synthetic ceramic material with a hexagonal wurtzite structure, formed by the covalent bonding of nitrogen (N) and aluminum (Al) elements. Its combination of excellent physical and chemical properties makes it a critical material in numerous high-tech fields. Key Properties 1. Extremely High Thermal Conductivity: This is AlN's most prominent advantage. Its theoretical thermal conductivity is as high as 320 W/(m·K) (almost twice that of metallic aluminum), far exceeding that of commonly used alumina ceramics (approximately 20-30 W/(m·K)). Even at high temperatures (200-300°C), its thermal conductivity remains high (>200 W/(m·K)), which is crucial for heat dissipation in high-temperature applications. Its excellent thermal conductivity is the core reason for its widespread use in electronic packaging and heat dissipation applications. 2. Good Electrical Insulation: It has a high resistivity (>10¹⁴ Ω·cm), making it an excellent insulator. Its dielectric constant is relatively low (approximately 8-9 @ 1MHz), and its dielectric loss is small (<0.001 @ 1MHz), making it very suitable for high-frequency, high-speed electronic applications. 3. Thermal Expansion Coefficient Matching Silicon: Its coefficient of thermal expansion (CTE) is approximately 4.5-5.0 × 10⁻⁶ /K (room temperature to 300°C), very close to that of single-crystal silicon (approximately 3.5-4.0 × 10⁻⁶ /K) and gallium arsenide (GaAs, approximately 5.8 × 10⁻⁶ /K). This matching is extremely important in semiconductor packaging, significantly reducing thermal stress between the chip and the substrate/package, improving device reliability and lifespan. 4. High Mechanical Strength and Hardness: It possesses high flexural strength and Vickers hardness, with superior mechanical properties to alumina. 5. Excellent Chemical Stability and Corrosion Resistance: It is very stable at room temperature and resists corrosion from most acids, alkalis, and molten metals (such as aluminum and gallium). In air, at high temperatures (>700°C), the surface slowly oxidizes to form a protective alumina layer. 6. Wide Bandgap Semiconductor Properties (Intrinsic): With a bandgap width of up to ~6.2 eV, it is an ultra-wide bandgap semiconductor material. This gives it a high critical breakdown electric field, low leakage current, and potential for high-temperature, high-frequency, and high-power electronic device applications (however, doping to achieve n-type and p-type conductivity remains challenging, which is a bottleneck for its application as a semiconductor). 7. Good Optical Properties: It has high transmittance (theoretical value >80%) in the ultraviolet to infrared band (approximately 0.2-6 μm), and can be used for optical windows and sensors. It is also an excellent acousto-optic material. Applications of Aluminum Nitride Based on the above excellent properties, aluminum nitride is mainly used in fields requiring efficient heat dissipation, electrical insulation, thermal matching, and reliability: 1. Electronic Packaging and Substrates: High-power LED packaging substrates: This is currently the largest-scale application. AlN substrates can effectively dissipate the large amount of heat generated by LED chips, significantly improving luminous efficiency, brightness, and device lifespan. High-power semiconductor modules (IGBT, SiC, GaN) substrates: Used in power electronics, electric vehicles, rail transit, industrial inverters, etc. AlN copper-clad laminates (DBC or AMB) can withstand high power density and high temperatures, providing excellent insulation and heat dissipation capabilities. Microwave radio frequency (RF) packaging and substrates: Low dielectric constant and loss make it very suitable for high-frequency circuits (such as base stations, radar, and satellite communications). Multi-chip modules (MCM) and hybrid integrated circuit (HIC) substrates: Provide the heat dissipation and electrical insulation required for high-density interconnections. Laser diode (LD) heat sinks: Efficient heat dissipation is crucial for LD performance and lifespan. 2. Heat Dissipation Components: Heat sinks and heat covers for high-heat-generating electronic components such as CPUs and GPUs. Substrates for thermoelectric coolers (TEC). Heat dissipation structural components requiring high thermal conductivity and insulation. 3. Piezoelectric and Surface Acoustic Wave Devices: It exhibits a piezoelectric effect and can be used to manufacture high-temperature, high-frequency surface acoustic wave (SAW) filters, bulk acoustic wave (BAW) resonators, and other devices. 4. Wide Bandgap Semiconductor Materials: As an ultra-wide bandgap semiconductor, it has potential applications in deep ultraviolet optoelectronic devices (such as UVC LEDs and detectors), high-temperature/high-frequency/high-power electronic devices (such as HEMTs), and radiation detectors, and is a research hotspot. 5. Refractory Materials and Crucibles: Utilizing its high melting point, chemical inertness, and resistance to molten metal corrosion, it is used as crucible and furnace lining materials for melting high-purity metals (such as aluminum, gallium, and arsenic) and semiconductor single crystals (such as gallium arsenide). 6. Optical Applications: Ultraviolet/infrared optical windows (requires high purity and transparency). Acousto-optic modulators. 7. Wear-Resistant and Corrosion-Resistant Components: Wear-resistant components, nozzles, and seals in special environments (such as corrosive media and high temperatures).

Silicon nitride (Si₃N₄) is a high-performance ceramic material. Due to its excellent mechanical strength, thermal shock resistance, electrical insulation, and moderate thermal conductivity, it has attracted significant attention as a substrate material in electronic packaging, power modules, and high-temperature devices. Core Advantages High Mechanical Strength: Bending strength is 2-3 times that of Al₂O₃, excellent thermal shock resistance, suitable for high-power modules. Good Thermal Matching: CTE is close to Si and SiC chips, reducing failures caused by thermal stress. Comprehensive Thermal Management Capabilities: Although the thermal conductivity is lower than AlN, the mechanical properties are superior, suitable for high-reliability scenarios. 2. Applications of Silicon Nitride Substrates (1) Power Electronics Packaging -IGBT Modules: Replacing Al₂O₃/AlN to improve thermal shock resistance (e.g., Toyota hybrid vehicles). -SiC/GaN Devices: Matching CTE to reduce the risk of chip cracking. (2) High-Frequency Communication -5G Radio Frequency Devices: Low dielectric loss (tanδ <0.001), suitable for millimeter-wave applications. Microwave Packaging: Used in radar and satellite communication systems. (3) High-Temperature Sensors Engine combustion chamber pressure sensors (high-temperature resistance, corrosion resistance). (4) LED Heat Sink Substrates High-power LED packaging, combining heat dissipation and mechanical support.

Lanthanum hexaboride (LaB₆) has important applications in the field of electronic film deposition (especially thermal evaporation deposition and electron beam evaporation deposition) due to its unique electron emission properties and chemical stability. With its efficient and stable electron emission capability, LaB₆ is a core material in high-precision film deposition processes, especially in the semiconductor and optical fields where it is irreplaceable. Future development directions include nanometer cathode design and composite doping technology to further reduce energy consumption and expand the application range. 1. Excellent thermionic emission performance Low work function (2.4-2.8eV), can efficiently emit electrons at high temperatures, and is an ideal electron beam evaporation source material. High current density (up to 100A/cm²), significantly improves film deposition efficiency, suitable for large-area or high-melting-point material film deposition needs (such as metal, oxide films). 2. High-temperature stability High melting point (2715°C), not easily volatile or decomposed during long-term operation in a vacuum environment, and has a longer lifespan than traditional tungsten filament evaporation sources. Resistant to chemical corrosion, especially suitable for the deposition of active materials (such as aluminum, titanium, etc.), avoiding contamination of the film layer. 3. Electron beam focusing capability The electron beam emitted by the LaB₆ cathode has concentrated energy and a small spot size, allowing precise control of the film deposition area, suitable for fine film deposition of micro-nano devices (such as semiconductors, optical coatings). 4. Application scenarios Electron beam evaporation deposition (E-beam Evaporation) LaB₆ is used as a cathode electron source for depositing high-melting-point materials (such as SiO₂, Al₂O₃, ITO, etc.), widely used in: Semiconductor industry: Metal interconnect layers (Al, Cu) of integrated circuits. Optical film deposition: Anti-reflection films, multilayer dielectric coatings of mirrors. Display technology: Transparent conductive films (ITO) of OLED electrodes. Field emission display (FED) Utilizing the low threshold field emission characteristics of LaB₆ to develop high-brightness, low-power display devices. Scanning electron microscope (SEM) electron source Replacing traditional tungsten filaments to provide higher resolution and stability. 5. Technological challenges and improvements Higher cost: The preparation of LaB₆ single crystals is complex, and the cost can be reduced by doping (such as CeB₆) or optimizing the sintering process. High brittleness: It is necessary to enhance the mechanical strength through nanostructure design or composite support structures (such as molybdenum base). Surface oxidation: In a vacuum environment, it is necessary to avoid exposure to oxygen, and preheating degassing is usually used to maintain performance. 6. Comparison with other electron source materials Characteristics LaB₆ Tungsten (W) Cerium hexaboride (CeB₆) Work function (eV) 2.4 - 2.8 4.5 2.6 - 2.8 Operating temperature (°C) 1500 - 1800 2200 - 2500 1400 - 1600 Lifespan (hours) 500 - 1000 50 - 100 800 - 1200 Applicable scenarios High-precision coating Low-cost conventional coating Long lifespan requirements Lanthanum hexaboride (LaB₆), with its outstanding advantages of low work function, high melting point, good chemical stability, high emission current density, high brightness, and long lifespan, has become the most mainstream and ideal thermionic cathode material in modern electron beam evaporation deposition equipment. It makes it possible to efficiently and stably evaporate various high-melting-point and refractory materials, and is one of the key components for obtaining high-performance, high-purity films. Its excellent performance significantly improves the production efficiency and film quality of electron beam deposition processes.

Wet nozzles are core components that accelerate and focus water (or a mixture of water and abrasives) into a high-speed jet. Through kinetic impact, they achieve cleaning, rust removal, surface treatment, and other functions, effectively reducing dust pollution during sandblasting.

Mini wet spray nozzle are specifically designed for wet applications in confined spaces with environmental protection requirements.

Curved nozzles, also known as banana nozzles, are designed for precise spraying into tight or hard-to-reach areas, such as the back of flanges and some corners inside pipes. The commonly used spray range for curved nozzles is 40° to 45°.

Angle nozzles are specialized spray gun components used in sandblasting machines to process complex geometries, internal cavities, and blind spots. Their core design involves a specifically angled outlet channel (commonly 15°, 30°, 45°, 90°), allowing the abrasive flow to strike the workpiece surface along a non-linear path.